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| SA5211 Transimpedance amplifier (180 MHz) Rev. 03 -- 07 October 1998 Product specification 1. Description The SA5211 is a 28 k transimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. 2. Features s s s s s s s Extremely low noise: 1.8 pA / Hz Single 5 V supply Large bandwidth: 180 MHz Differential outputs Low input/output impedances High power supply rejection ratio 28 k differential transresistance 3. Applications c c s s s s s s s s Fiber optic receivers, analog and digital Current-to-voltage converters Wide-band gain block Medical and scientific Instrumentation Sensor preamplifiers Single-ended to differential conversion Low noise RF amplifiers RF signal processing Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) 4. Pinning information 4.1 Pinning D Package GND2 GND2 NC IIN NC VCC1 VCC2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT (-) GND2 OUT (+) GND1 GND1 GND1 GND1 TOP VIEW SD00318 Fig 1. Pin configuration. 5. Ordering information Table 1: Ordering information Package Name SA5211D SO14 Description plastic small outline package; 14 leads; body width 3.9 mm Version Temperature range (C) Type number SOT108-1 -40 to +85 6. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCC Tamb TJ TSTG PD MAX IIN MAX JA [1] [2] Parameter power supply operating ambient temperature range operating junction temperature range storage temperature range power dissipation, TA = 25 C (still-air) [1] maximum input current [2] thermal resistance Conditions Min - -40 -55 -65 - - - Max 6 +85 +150 +150 1.0 5 125 Unit V C C C W mA C/W Maximum dissipation is determined by the operating ambient temperature and the thermal resistance: JA = 125 C/W The use of a pull-up resistor to VCC, for the PIN diode is recommended. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 2 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) Recommended operating conditions Parameter supply voltage ambient temperature range junction temperature range Conditions Min 4.5 -40 -40 Max 5.5 +85 +105 Unit V C C Table 3: Symbol VCC Tamb TJ 7. Static characteristics Table 4: DC electrical characteristics Min and Max limits apply over operating temperature range at VCC = 5 V, unless otherwise specified. Typical data apply at VCC = 5 V and Tamb = 25 C. Symbol VIN VO VOS ICC IOMAX IIN IIN MAX Parameter input bias voltage output bias voltage output offset voltage supply current output sink/source current [1] input current (2% linearity) maximum input current overload threshold Test Circuit 8, Procedure 2 Test Circuit 8, Procedure 4 Test conditions Min 0.55 2.7 - 20 3 20 30 Typ 0.8 3.4 0 26 4 40 60 Max 1.00 3.7 130 31 - - - Unit V V mV mA mA A A [1] Test condition: output quiescent voltage variation is less than 100 mV for 3 mA load current. 8. Dynamic characteristics Table 5: AC electrical characteristics Typical data and Min and Max limits apply at VCC = 5 V and Tamb = 25 C Symbol RT RO RT RO f3dB RIN CIN R/V R/T IN Parameter transresistance (differential output) output resistance (differential output) transresistance (single-ended output) output resistance (single-ended output) bandwidth (-3dB) input resistance input capacitance transresistance power supply sensitivity transresistance ambient temperature sensitivity RMS noise current spectral density (referred to input) integrated RMS noise current over the bandwidth (referred to input) VCC = 50.5 V Tamb = Tamb MAX-Tamb MIN Test Circuit 2 f = 10 MHz TA = 25 C TA = 25 C Test Circuit 2 Test conditions DC tested RL = Test Circuit 8, Procedure 1 DC tested DC tested RL = DC tested TA = 25C Test circuit 1 Min 21 - 10.5 - - - - - - - Typ 28 30 14 15 180 200 4 3.7 1.8 Max 36 - 18.0 - - - - - - Unit k k MHz pF %/V %/C pA/Hz 0.025 - IT - - - - 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 3 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) Table 5: AC electrical characteristics...continued Typical data and Min and Max limits apply at VCC = 5 V and Tamb = 25 C Symbol In Parameter CS = 0 [1] Test conditions f = 50 MHz f = 100 MHz f = 200 MHz f = 50 MHz f = 100 MHz f = 200 MHz DC tested, VCC = 0.1V Equivalent AC Test Circuit 3 DC tested, VCC = 0.1V Equivalent AC Test Circuit 4 DC tested, VCC = 0.1V Equivalent AC Test Circuit 5 f = 0.1 MHz Test Circuit 6 RL = Test Circuit 8, Procedure 3 Test Circuit 7 Test Circuit 7 Min - - - - - - 23 Typ 13 20 35 13 21 41 32 Max - - - - - - - Unit nA In CS = 1pF nA PSRR power supply rejection ratio [2] (VCC1 = VCC2) power supply rejection ratio [2] (VCC1) dB PSRR 23 32 - dB PSRR power supply rejection ratio [2] (VCC2) 45 65 - dB PSRR VOMAX VIN MAX tR [1] [2] [3] [4] power supply rejection ratio (ECL configuration) [2] maximum differential output voltage swing maximum input amplitude for output duty cycle of 505% [3] rise time for 50mV output signal [4] - 1.7 160 - 23 3.2 - 0.8 - - - 1.8 dB VP-P mVP-P ns Package parasitic capacitance amounts to about 0.2pF PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in VCC lines. Guaranteed by linearity and overload tests. tR defined as 20 to 80% rise time. It is guaranteed by -3dB bandwidth test. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 4 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) 9. Test circuits SINGLE-ENDED NETWORK ANALYZER RT VOUT R = 2 x S21 x R VIN DIFFERENTIAL VOUT R = 4 x S21 x R VIN RT = S-PARAMETER TEST SET PORT 1 5V VCC1 VCC2 33 0.1F ZO = 50 PORT 2 RO ZO 1 - S22 - 33 1 + S22 RO = 2ZO 1 - S22 - 66 1 + S22 0.1F ZO = 50 OUT R = 1k IN DUT 33 OUT 50 GND1 GND2 0.1F RL = 50 Test Circuit 1 SPECTRUM ANALYZER 5V VCC1 VCC2 33 AV = 60DB 0.1F ZO = 50 OUT NC IN DUT 33 OUT 0.1F RL = 50 GND1 GND2 Test Circuit 2 SD00319 Fig 2. Test circuits 1 and 2. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 5 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) NETWORK ANALYZER 5V 10F 0.1F PORT 1 S-PARAMETER TEST SET PORT 2 10F 0.1F 16 CURRENT PROBE 1mV/mA CAL VCC1 VCC2 OUT 33 0.1F 50 TEST 100 BAL. 0.1F TRANSFORMER NH0300HB IN 33 OUT UNBAL. GND1 GND2 Test Circuit 3 NETWORK ANALYZER 5V 10F 0.1F PORT 1 S-PARAMETER TEST SET PORT 2 10F 0.1F 16 CURRENT PROBE 1mV/mA CAL 5V 10F 0.1F IN VCC2 VCC1 OUT 33 0.1F 50 TEST 100 BAL. 0.1F TRANSFORMER NH0300HB UNBAL. 33 OUT GND1 GND2 Test Circuit 4 SD00320 Fig 3. Test circuits 3 and 4. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 6 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) NETWORK ANALYZER 5V 10F 0.1F PORT 1 S-PARAMETER TEST SET PORT 2 10F 0.1F 16 CURRENT PROBE 1mV/mA CAL 5V 10F 0.1F IN VCC1 VCC2 OUT 33 0.1F 50 TEST 100 BAL. 0.1F TRANSFORMER NH0300HB UNBAL. 33 OUT GND1 GND2 Test Circuit 5 NETWORK ANALYZER S-PARAMETER TEST SET GND PORT 1 PORT 2 10F 0.1F 16 CURRENT PROBE 1mV/mA CAL GND1 GND2 OUT 33 0.1F 50 TEST 100 BAL. 0.1F TRANSFORMER NH0300HB IN 33 OUT 5.2V 10F 0.1F VCC1 VCC2 UNBAL. Test Circuit 6 SD00321 Fig 4. Test circuits 5 and 6. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 7 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) PULSE GEN. VCC1 VCC2 33 0.1F A 33 OUT 0.1F ZO = 50 OSCILLOSCOPE B ZO = 50 0.1F 1k IN DUT OUT 50 GND1 GND2 Measurement done using differential wave forms Test Circuit 7 SD00322 Fig 5. Test circuit 7. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 8 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) Typical Differential Output Voltage vs Current Input 5V OUT + IN IIN (A) GND1 GND2 DUT OUT - + VOUT (V) - 2.00 1.60 DIFFERENTIAL OUTPUT VOLTAGE (V) 1.20 0.80 0.40 0.00 -0.40 -0.80 -1.20 -1.60 -2.00 -100 -80 -60 -40 -20 0 20 40 60 80 100 CURRENT INPUT (A) NE5211 TEST CONDITIONS Procedure 1 RT measured at 15A RT = (VO1 - V O2)/(+15A - (-15A)) Where: V O1 Measured at IIN = +15A VO2 Measured at IIN = -15A Procedure 2 Linearity = 1 - ABS((VOA - V OB) / (VO3 - V O4)) Where: V O3 Measured at IIN = +30A VO4 Measured at IIN = -30A VOA = RT x (+ 30 A) + VOB VOB = RT x (- 30 A) + VOB Procedure 3 VOMAX = V O7 - V O8 Where: V O7 Measured at IIN = +65A VO8 Measured at IIN = -65A Procedure 4 IIN Test Pass Conditions: VO7 - V O5 > 20mV and V 06 - V O5 > 50mV Where: V O5 Measured at IIN = +40A VO6 Measured at IIN = -400A VO7 Measured at IIN = +65A VO8 Measured at IIN = -65A Test Circuit 8 SD00331 Fig 6. Test circuit 8. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 9 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) 10. Typical performance characteristics NE5211 Supply Current vs Temperature 30 TOTAL SUPPLY CURRENT (mA) 5.5V OUTPUT BIAS VOLTAGE (V) 3.50 NE5211 Output Bias Voltage vs Temperature 2.0 DIFFERENTIAL OUTPUT VOLTAGE (V) VCC = 5.0V 3.45 NE5211 Output Voltage vs Input Current +85C +125C 28 55C +25C (ICC1+ I CC2) 26 5.0V 24 3.40 PIN 14 0 3.35 PIN 12 22 4.5V 3.30 55C +25C +125C +85C 20 3.25 18 60 40 20 60 40 20 0 20 40 60 80 100 120 140 2.0 0 20 40 60 80 100 120 140 100.0 0 INPUT CURRENT (mA) +100.0 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) NE5211 Input Bias Voltage vs Temperature 950 4.1 900 INPUT BIAS VOLTAGE (mV) 3.9 OUTPUT BIAS VOLTAGE (V) 5.5V NE5211 Output Bias Voltage vs Temperature 5.5V DIFFERENTIAL OUTPUT VOLTAGE (V) PIN 14 NE5211 Differential Output Voltage vs Input Current 2.0 5.0V 5.5V 4.5V 3.7 850 3.5 5.0V 800 0 3.3 750 3.1 4.5V 4.5V 700 4.5V 650 60 40 20 0 20 40 60 80 100 120 140 2.9 5.0V 5.5V 0 INPUT CURRENT (mA) +100.0 2.7 60 40 20 0 20 40 60 80 100 120 140 2.0 100.0 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) NE5211 Output Offset Voltage vs Temperature 40 DIFFERENTIAL OUTPUT SWING (V) 20 OUTPUT OFFSET VOLTAGE (mV) 0 20 40 5.0V 60 80 4.5V VOS = VOUT12 VOUT14 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 0 20 40 60 80 100 120 140 NE5211 Differential Output Swing vs Temperature DC TESTED RL = 4.5 NE5211 Output Voltage vs Input Current +125C +85C +25C +25C OUTPUT VOLTAGE (V) 55C 55C +125C +85C 5.5V 5.0V 5.5V 100 120 140 60 40 20 4.5V +125C +85C 60 40 20 0 20 40 60 80 100 120 140 2.5 100.0 55C 0 INPUT CURRENT (mA) +25C +100.0 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) 5,!! Fig 7. Typical performance characteristics. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 10 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) NE5211 Differential Transresistance 5.5V PIN 14 TA = 25C RL = 50W 1 10 FREQUENCY (MHz) 5.0V 4.5V 100 DIFFERENTIAL TRANSRESISTANCE (kW ) 17 16 15 14 13 12 11 10 9 8 0.1 NE5211 Gain vs Frequency 5.5V PIN 12 TA = 25C RL = 50W 1 10 FREQUENCY (MHz) 5.0V 4.5V 100 17 16 15 14 13 12 11 10 9 8 0.1 NE5211 Gain vs Frequency 33 32 31 30 vs Temperature GAIN (dB) GAIN (dB) DC TESTED RL = 29 5.5V 28 5.0V 4.5V 27 60 40 20 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE (C) NE5211 Typical Bandwidth Distribution NE5211 Gain vs Frequency NE5211 Gain vs Frequency (70 Parts from 3 Wafer Lots) 17 55C 16 15 14 125C 13 PIN 12 85C 12 VCC = 5V 25C 11 10 9 8 0.1 1 10 100 FREQUENCY (MHz) 17 55C 16 15 14 125C 13 PIN 14 85C 12 VCC = 5V 25C 11 10 9 8 0.1 1 10 100 FREQUENCY (MHz) 60 PIN 12 VCC = 5.0V SINGLE-ENDED TA = 25C 50 RL = 50W 40 30 20 10 0 143 155 167 179 191 203 FREQUENCY (MHz) POPULATION (%) GAIN (dB) GAIN (dB) NE5211 Bandwidth vs Temperature NE5211 Gain and Phase NE5211 Gain and Phase 220 BANDWIDTH (MHz) 200 5.5V 5.0V 180 4.5V 160 140 120 PHASE (o) GAIN (dB) GAIN (dB) 0 PIN 12 VCC = 5V TA = 25C 1 10 FREQUENCY (MHz) 100 60 120 PIN 14 VCC = 5V TA = 25C 1 10 FREQUENCY (MHz) 100 120 270 100 60 40 20 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE (C) 5,!!! Fig 8. Typical performance characteristics. (cont.) 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 11 of 28 PHASE (o) PIN 12 SINGLE-ENDED RL = 50W 17 16 15 14 13 12 11 10 9 8 0.1 Shift vs Frequency 120 60 17 16 15 14 13 12 11 10 9 8 0.1 Shift vs Frequency Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) NE5211 Output Resistance vs Temperature 18 VCC = 5.0V 18 NE5211 Output Resistance vs Temperature 19 PIN 12 17 ) ) DC TESTED 18 NE5211 Output Resistance vs Temperature PIN 14 DC TESTED W W OUTPUT RESISTANCE ( OUTPUT RESISTANCE ( 16 PIN 14 16 OUTPUT RESISTANCE ( W 17 ) DC TESTED 17 15 PIN 12 14 15 4.5V 16 4.5V 5.0V 5.0V 14 5.5V 15 5.5V 13 60 40 20 0 20 40 60 80 100 120 140 13 60 40 20 0 20 40 60 80 100 120 140 14 60 40 20 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) NE5211 Output Resistance vs Frequency ) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 5.5V 4.5V 5.0V PIN 12 TA = 25C ) 80 70 60 50 40 30 20 10 0 0.1 NE5211 Output Resistance vs Frequency W OUTPUT RESISTANCE ( OUTPUT RESISTANCE ( NE5211 Output Resistance vs Frequency W ) 80 70 60 50 40 30 20 10 0 0.1 1 10 100 PIN 14 PIN 12 VCC = 5.0V OUTPUT RESISTANCE ( W VCC = 5.0V +125C +85C +25C 55C 1 10 100 FREQUENCY (MHz) FREQUENCY (MHz) FREQUENCY (MHz) NE5211 Power Supply Rejection Ratio vs Temperature POWER SUPPLY REJECTION RATIO (dB) 40 VCC1 = VCC2 = 5.0V 10 8 6 DELAY (ns) 4 2 0 NE5211 Group Delay vs Frequency 38 DVCC = 0.1V 36 DC TESTED OUTPUT REFERRED 34 32 30 0.1 28 60 40 20 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 160 180 200 FREQUENCY (MHz) AMBIENT TEMPERATURE (C) 5,!!# Fig 9. Typical performance characteristics. (cont.) 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 12 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) Output Step Response VCC = 5V TA = 25C 20mV/Div 0 2 4 6 8 10 (ns) 12 14 16 18 20 Fig 10. Typical performance characteristics. (cont.) 11. Theory of operation Transimpedance amplifiers have been widely used as the preamplifier in fiber-optic receivers. The SA5211 is a wide bandwidth (typically 180 MHz) transimpedance amplifier designed primarily for input currents requiring a large dynamic range, such as those produced by a laser diode. The maximum input current before output stage clipping occurs at typically 50A. The SA5211 is a bipolar transimpedance amplifier which is current driven at the input and generates a differential voltage signal at the outputs. The forward transfer function is therefore a ratio of the differential output voltage to a given input current with the dimensions of ohms. The main feature of this amplifier is a wideband, low-noise input stage which is desensitized to photodiode capacitance variations. When connected to a photodiode of a few picoFarads, the frequency response will not be degraded significantly. Except for the input stage, the entire signal path is differential to provide improved power-supply rejection and ease of interface to ECL type circuitry. A block diagram of the circuit is shown in Figure 11. The input stage (A1) employs shunt-series feedback to stabilize the current gain of the amplifier. The transresistance of the amplifier from the current source to the emitter of Q3 is approximately the value of the feedback resistor, RF = 14.4 k. The gain from the second stage (A2) and emitter followers (A3 and A4) is about two. Therefore, the differential transresistance of the entire amplifier, RT is V OUT ( diff ) R T = ---------------------------- = 2 R F = 2 ( 14.4 K ) = 28.8 k I IN The single-ended transresistance of the amplifier is typically 14.4 k. The simplified schematic in Figure 12 shows how an input current is converted to a differential output voltage. The amplifier has a single input for current which is referenced to Ground 1. An input current from a laser diode, for example, will be converted into a voltage by the feedback resistor RF. The transistor Q1 provides most of the open loop gain of the circuit, AVOL70. The emitter follower Q2 minimizes loading on Q1. The transistor Q4, resistor R7, and VB1 provide level shifting and interface with the Q15 - Q16 differential pair of the second stage which is biased with an internal reference, VB2. The differential outputs are derived from emitter followers 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. (1) Product specification Rev. 03 -- 07 October 1998 13 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) Q11 - Q12 which are biased by constant current sources. The collectors of Q11 - Q12 are bonded to an external pin, VCC2, in order to reduce the feedback to the input stage. The output impedance is about 17 single-ended. For ease of performance evaluation, a 33 resistor is used in series with each output to match to a 50 test system. 12. Bandwidth calculations The input stage, shown in Figure 13, employs shunt-series feedback to stabilize the current gain of the amplifier. A simplified analysis can determine the performance of the amplifier. The equivalent input capacitance, CIN, in parallel with the source, IS, is approximately 4 pF (typical), assuming that CS = 0 where CS is the external source capacitance. Since the input is driven by a current source the input must have a low input resistance. The input resistance, RIN, is the ratio of the incremental input voltage, VIN, to the corresponding input current, IIN and can be calculated as: V IN RF 14.4 k R IN = -------- = ----------------------- = ------------------- = 203 I IN 1 + A VOL 71 Thus CIN and RIN will form the dominant pole of the entire amplifier; 1 f -3db = ------------------------2R IN C IN Assuming typical values for RF = 14.4 k, RIN = 200 , CIN = 4 pF 1 f -3db = -------------------------------------- = 200 MHz 2 4 pF 200 (4) (3) (2) The operating point of Q1, Figure 12, has been optimized for the lowest current noise without introducing a second dominant pole in the pass-band. All poles associated with subsequent stages have been kept at sufficiently high enough frequencies to yield an overall single pole response. Although wider bandwidths have been achieved by using a cascade input stage configuration, the present solution has the advantage of a very uniform, highly desensitized frequency response because the Miller effect dominates over the external photodiode and stray capacitances. For example, assuming a source capacitance of 1 pF, input stage voltage gain of 70, RIN = 60 then the total input capacitance, CIN = (1 + 4) pF which will lead to only a 20% bandwidth reduction. 13. Noise Most of the currently installed fiber-optic systems use non-coherent transmission and detect incident optical power. Therefore, receiver noise performance becomes very important. The input stage achieves a low input referred noise current (spectral density) of 1.8 pA/Hz (typical). The transresistance configuration assures that the external high value bias resistors often required for photodiode biasing will not contribute to the total noise system noise. The equivalent input RMS noise current is 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 14 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) strongly determined by the quiescent current of Q1, the feedback resistor RF, and the bandwidth; however, it is not dependent upon the internal Miller-capacitance. The measured wideband noise was 41 nA RMS in a 200 MHz bandwidth. 14. Dynamic range calculations The electrical dynamic range can be defined as the ratio of maximum input current to the peak noise current: Electrical dynamic range, DE, in a 200 MHz bandwidth assuming IINMAX = 60 A and a wideband noise of IEQ = 41 nARMS for an external source capacitance of CS = 1 pF. (Max. input current) D E = -----------------------------------------------(Peak noise current) ( 60 x 10 ) D E (dB) = 20 log ----------------------------9 ( 2 41 10 ) -6 (5) (6) ( 60 A ) D E ( dB ) = 20 log -------------------- = 60db ( 58 nA ) In order to calculate the optical dynamic range the incident optical power must be considered. For a given wavelength ; hc Energy of one Photon = ----- watt sec (Joule) Where h = Planck's Constant = 6.6 x 10-34 Joule sec. c = speed of light = 3 x 108 m/sec c / = optical frequency P ----hc No. of incident photons/sec = ----- where P = optical incident power (7) P ----hc No. of generated electrons/sec = x ---- where = quantum efficiency no. of generated electron hole pairs = ----------------------------------------------------------------------------------no. of incident photons 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 15 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) P ---hc I = x ----- x e Amps (Coulombs/sec.) where e = electron charge = 1.6 x 10-19 Coulombs xe -----------hc Responsivity R = ------------ Amp/watt I = PxR Assuming a data rate of 400 Mbaud (Bandwidth, B = 200 MHz), the noise parameter Zn may be calculated as:1 -9 I EQ 41 x 10 Z = ------- = ------------------------------------------------------------ = 1281 - 19 6 qB ( 1.6 x 10 ) ( 200 x 10 ) (8) where Z is the ratio of RMS noise output to the peak response to a single hole-electron pair. Assuming 100% photodetector quantum efficiency, half mark/half space digital transmission, 850nm lightwave and using Gaussian approximation, the minimum required optical power to achieve 10-9 BER is: hc - 19 P avMIN = 12 ----BZ = 12 x 2.3 x 10 200 x 10 ( 1281 ) = 719 nW = - 31.5 dBm = 1139 nW = - 29.4 dBm where h is Planck's Constant, c is the speed of light, is the wavelength. The minimum input current to the SA5211, at this input power is: 1 Joule 707 x 10 x 1.6 x 10 I avMIN = qP avMIN ---- ----------- x ----------- x q = l = ---------------------------------------------------------- = 500 nA - 19 hc Joule sec 2.3 x 10 -9 - 19 6 (9) (10) Choosing the maximum peak overload current of IavMAX = 60 A, the maximum mean optical power is: - 19 hcl avMAX 2.3 x 10 P avMAX = --------------------- = --------------------------60 x 10 A = 86 W or - 10.6 dBm (optical) - 19 q 1.6 x 10 (11) Thus the optical dynamic range, DO is: D O = P avMAX - P avMIN = - 4.6 - ( - 29.4 ) = 24.8 dB D O = P avMAX - P avMIN = - 31.5 - ( - 10.6 ) (12) 1. S.D. Personick, Optical Fiber Transmission Systems, Plenum Press, NY, 1981, Chapter 3. (c) Philips Electronics N.V. 2001. All rights reserved. 9397 750 07427 Product specification Rev. 03 -- 07 October 1998 16 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) OUTPUT + A3 INPUT A1 A2 RF A4 OUTPUT - SD00327 Fig 11. SA5211 - Block diagram. This represents the maximum limit attainable with the SA5211 operating at 200 MHz bandwidth, with a half mark/half space digital transmission at 850nm wavelength. VCC1 VCC2 R1 Q2 Q1 R2 GND1 PHOTODIODE R5 R4 GND2 R7 VB2 Q3 R3 Q4 + Q15 R14 Q16 R15 + OUT+ R12 R13 Q11 Q12 OUT- INPUT SD00328 Fig 12. Transimpedance amplifier. VCC R1 INPUT IIN IB Q1 R2 VIN IF VEQ3 IC1 Q2 Q3 R3 RF R4 SD00329 Fig 13. Shunt-series input stage. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 17 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) 15. Application information Package parasitics, particularly ground lead inductances and parasitic capacitances, can significantly degrade the frequency response. Since the SA5211 has differential outputs which can feed back signals to the input by parasitic package or board layout capacitances, both peaking and attenuating type frequency response shaping is possible. Constructing the board layout so that Ground 1 and Ground 2 have very low impedance paths has produced the best results. This was accomplished by adding a ground-plane stripe underneath the device connecting Ground 1, Pins 8-11, and Ground 2, Pins 1 and 2 on opposite ends of the SO14 package. This ground-plane stripe also provides isolation between the output return currents flowing to either VCC2 or Ground 2 and the input photodiode currents to flowing to Ground 1. Without this ground-plane stripe and with large lead inductances on the board, the part may be unstable and oscillate near 800 MHz. The easiest way to realize that the part is not functioning normally is to measure the DC voltages at the outputs. If they are not close to their quiescent values of 3.3 V (for a 5 V supply), then the circuit may be oscillating. Input pin layout necessitates that the photodiode be physically very close to the input and Ground 1. Connecting Pins 3 and 5 to Ground 1 will tend to shield the input but it will also tend to increase the capacitance on the input and slightly reduce the bandwidth. As with any high-frequency device, some precautions must be observed in order to enjoy reliable performance. The first of these is the use of a well-regulated power supply. The supply must be capable of providing varying amounts of current without significantly changing the voltage level. Proper supply bypassing requires that a good quality 0.1 F high-frequency capacitor be inserted between VCC1 and VCC2, preferably a chip capacitor, as close to the package pins as possible. Also, the parallel combination of 0.1 F capacitors with 10 F tantalum capacitors from each supply, VCC1 and VCC2, to the ground plane should provide adequate decoupling. Some applications may require an RF choke in series with the power supply line. Separate analog and digital ground leads must be maintained and printed circuit board ground plane should be employed whenever possible. Figure 14 depicts a 50 Mb/s TTL fiber-optic receiver using the BPF31, 850 nm LED, the SA5211 and the SA5214 post amplifier. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 18 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) +VCC 47F C1 C2 .01F GND R2 220 C9 D1 LED 1 2 100pF 3 4 R3 47k 5 6 7 8 9 LED CPKDET THRESH GNDA FLAG JAM VCCD VCCA GNDD TTLOUT IN1B IN1A 20 C7 100pF 19 C8 10 0.1F 11 12 13 14 8 9 GND GND GND GND VCC VCC NC 7 6 5 4 3 2 1 L1 10H R1 100 C5 1.0F C4 .01F C3 10F .01F NE5210 CAZP 18 CAZN 17 C6 IIN NC GND GND OUT1B 16 OUT GND OUT L2 10H C11 .01F NE5214 BPF31 OPTICAL INPUT IN8B OUT1A IN8A RHYST 15 14 13 12 C10 10F L3 10H C12 10F C13 .01F 10 RPKDET 11 R4 4k VOUT (TTL) SD00330 The NE5210/NE5217 combination can operate at data rates in excess of 100 Mb/s NRZ The capacitor C7 decreases the NE5210 bandwidth to improve overall S/N ratio in the DC-50 MHz band, but does create extra high frequency noise on the NE5210 VCC pin(s). Fig 14. A 50Mb/s fiber optic receiver. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 19 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) 1 14 OUT () GND 2 2 13 GND 2 GND 2 3 12 OUT (+) NC INPUT 4 11 GND 1 NC 5 10 GND 1 VCC1 6 9 GND 1 7 ECN No.: 06027 1992 Mar 13 VCC 2 8 GND 1 5,"&& Fig 15. SA5211 Bonding diagram. 15.1 Die sales disclaimer Due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. All die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25C), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. Although the most modern 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 20 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) processes are utilized for wafer sawing and die pick and place into waffle pack carriers, it is impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die. Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. Although Philips Semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. However, for the reasons stated above, Philips Semiconductors cannot guarantee this or any other yield on any die sales. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 21 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) 16. Package outline SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE vMA Z 14 8 Q A2 pin 1 index Lp 1 e bp 7 wM L detail X A1 (A 3) A 0 2.5 scale 5 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 8.75 8.55 E (1) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 0.028 0.024 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3 0.010 0.057 inches 0.069 0.004 0.049 0.019 0.0100 0.35 0.014 0.0075 0.34 0.244 0.039 0.050 0.041 0.228 0.016 0.028 0.004 0.012 8 0o o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT108-1 REFERENCES IEC 076E06 JEDEC MS-012 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-22 99-12-27 Fig 16. SOT108-1. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 22 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) 17. Soldering 17.1 Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 17.2 Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 220 C for thick/large packages, and below 235 C small/thin packages. 17.3 Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 23 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 17.4 Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. 17.5 Package related soldering information Table 6: Package BGA, HBGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS PLCC [3], SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO [1] Suitability of surface mount IC packages for wave and reflow soldering methods Soldering method Wave not suitable not suitable [2] Reflow [1] suitable suitable suitable suitable suitable suitable not recommended [3] [4] not recommended [5] [2] [3] [4] [5] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 24 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) 18. Revision history Table 7: 03 Revision history CPCN 853-1799 20142 Description Product specification; third version; supersedes second version SA5211_2 of 1998 Oct 07 (9397 750 04624). Modifications: The format of this specification has been redesigned to comply with Philips Semiconductors' new presentation and information standard. 02 19981007 853-1799 20142 Product specification; second version; supersedes first version SA5211_1 of 1995 Apr 26. Modifications: Changed prefix from NE to SA. 01 19950426 853-1799 15170 Product specification; initial version. Rev Date 19981007 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 25 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) 19. Data sheet status Data sheet status [1] Objective data Preliminary data Product status [2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 20. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 21. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9397 750 07427 (c) Philips Electronics N.V. 2001 All rights reserved. Product specification Rev. 03 -- 07 October 1998 26 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet: http://www.semiconductors.philips.com (SCA72) 9397 750 07427 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 03 -- 07 October 1998 27 of 28 Philips Semiconductors SA5211 Transimpedance amplifier (180 MHz) Contents 1 2 3 4 4.1 5 6 7 8 9 10 11 12 13 14 15 15.1 16 17 17.1 17.2 17.3 17.4 17.5 18 19 20 21 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3 Dynamic characteristics . . . . . . . . . . . . . . . . . . 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performance characteristics . . . . . . . 10 Theory of operation . . . . . . . . . . . . . . . . . . . . 13 Bandwidth calculations . . . . . . . . . . . . . . . . . 14 Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Dynamic range calculations . . . . . . . . . . . . . 15 Application information. . . . . . . . . . . . . . . . . . 18 Die sales disclaimer . . . . . . . . . . . . . . . . . . . . 20 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Introduction to soldering surface mount packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 23 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 23 Manual soldering . . . . . . . . . . . . . . . . . . . . . . 24 Package related soldering information . . . . . . 24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 25 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 26 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 (c) Philips Electronics N.V. 2001. Printed in the U.S.A All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 07 October 1998 Document order number: 9397 750 07427 |
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